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Paper Publications
- Hu, Yanfei^Zhang, Yuming^Guo, Hui^Chong, LaiYuan^Zhang, Chenxu^Zhang, Yimen,Effects of substrate on the domains and electrical properties of epitaxial graphene formed on on-axis C-face 4H-SiC:JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2016,27(7):7595-7602
- Zhang, Yimeng ; Zhang, Yuming ; Zhang, Yimen ,Low power dissipation real time counter for sensor network application:Xi'an Dianzi Keji Daxue Xuebao/Journal of Xidian University,2015,42(6):66-69 and 1
- Hu, Yanfei^Zhang, Yuming^Guo, Hui^Chong, LaiYuan^Zhang, Yimen,Preparation of few-layer graphene on on-axis 4H-SiC (000(1)over-bar) substrates using a modified SiC-stacked method:MATERIALS LETTERS,2016,164:655-658
- Hu, Yanfei^Zhang, Yuming^Guo, Hui^Chong, Laiyuan^Zhang, Chenxu^Zhang, Yimen,Growth of thickness-controlled epitaxial graphene on on-axis 6H-SiC (C-face) substrate in graphite enclosure:JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2016,27(6):6242-6248
- Yuan, Hao^Song, Qingwen^Tang, Xiaoyan^Zhang, Yimeng^Zhang, Yimen^Zhang, Yuming,Design and experiment of 4H-SiC JBS diodes achieving a near-theoretical breakdown voltage with non-uniform floating limiting rings terminal:SOLID-STATE ELECTRONICS,2016,123:58-62
- Yu, Xinjiang^Lv, Hongliang^Zhang, Yuming^Zhang, Yimen^Qin, Zaiyang,Comparative study of atomic-layer-deposited HfO2/Al2O3, Hf0.8Al0.2Ox and Hf0.5Al0.5Ox on N-GaAs:SUPERLATTICES AND MICROSTRUCTURES,2016,99:58-61
- Wang, Yucheng^Jia, Renxu^Zhao, Yanli^Li, Chengzhan^Zhang, Yuming,Investigation of Leakage Current Mechanisms in La2O3/SiO2/4H-SiC MOS Capacitors with Varied SiO2 Thickness:JOURNAL OF ELECTRONIC MATERIALS,2016,45(11):5600-5605
- Lu, Bin^Lv, Hongliang^Zhang, Yuming^Zhang, Yimen^Liu, Chen,Comparison of HfAlO, HfO2/Al2O3, and HfO2 on n-type GaAs using atomic layer deposition:SUPERLATTICES AND MICROSTRUCTURES,2016,99:54-57
- Jin, Chengji^Lu, Hongliang^Zhang, Yimen^Guan, He^Li, Zheng^Zhang, Yuming,Study on reverse-biased gate leakage current mechanisms in Al2O3/InAlAs metal-oxide-semiconductor structures:THIN SOLID FILMS,2016,619:48-52
- Huang, Haili^Tang, Xiaoyan^Guo, Hui^Zhang, Yimen^Zhang, Yimeng^Zhang, Yuming,Design and spectrum calculation of 4H-SiC thermal neutron detectors using FLUKA and TCAD:NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT,2016,833:192-198
- Influence of oxidation temperature on the interfacial properties of n-type 4H-SiC MOS capacitors:Applied Surface Science,2017,397:175-182
- Guan, He; Lv, Hongliang; Zhang, Yuming; Zhang, Yimen,Improved modeling on the RF behavior of InAs/AlSb HEMTs:SOLID-STATE ELECTRONICS,2015,114:155-162
- Zhang, Yimeng^Tang, Meiyan^Song, Qingwen^Tang, Xiaoyan^Lv, Hongliang^Liu, Sicheng,High temperature characterization of normally-on 4H-SiC junction field-effect transistor:SUPERLATTICES AND MICROSTRUCTURES,2016,99:113-117
- Jin, Chengji^Lu, Hongliang^Zhang, Yimen^Zhang, Yuming^Guan, He^Wu, Lifan^Lu, Bin^Liu, Chen,Transport mechanisms of leakage current in Al2O3/InAlAs MOS capacitors:SOLID-STATE ELECTRONICS,2016,123:106-110
- Yuan, Hao^Song, Qingwen^Tang, Xiaoyan^Yuan, Lei^Yang, Shuai^Tang, Guannan^Zhang, Yimen^Zhang, Yuming,Trench Multiple Floating Limiting Rings Termination for 4H-SiC High-Voltage Devices:IEEE ELECTRON DEVICE LETTERS,2016,37(8):1037-1040
- Dong, Linpeng^Jia, Renxu^Xin, Bin^Zhang, Yuming,Effects of post-annealing temperature and oxygen concentration during sputtering on the structural and optical properties of beta-Ga2O3 films:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,2016,34(6)
- Lou, Yong-Le^Zhang, Yu-Ming^Guo, Hui^Xu, Da-Qing^Zhang, Yi-Men,Effects of Fe-Oxide and Mg Layer Insertion on Tunneling Magnetoresistance Properties of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions:CHINESE PHYSICS LETTERS,2016,33(11)
- Jia, Yifan^Lv, Hongliang^Niu, Yingxi^Li, Ling^Song, Qingwen^Tang, Xiaoyan^Li, Chengzhan^Zhao, Yanli^Xiao, Li^Wang, Liangyong^Tang, Guangming^Zhang, Yimen^Zhang, Yuming,Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal-oxide-semiconductor devices:CHINESE PHYSICS B,2016,25(9)
- Hu, Jichao^Jia, Renxu^Xin, Bin^Peng, Bo^Wang, Yuehu^Zhang, Yuming,Effect of Low Pressure on Surface Roughness and Morphological Defects of 4H-SiC Epitaxial Layers:MATERIALS,2016,9(9)
- Peng, B.^Jia, R. X.^Wang, Y. T.^Dong, L. P.^Hu, J. C.^Zhang, Y. M.,Concentration of point defects in 4H-SiC characterized by a magnetic measurement:AIP ADVANCES,2016,6(9)
- Wu, Li-Fan^Zhang, Yu-Ming^Lv, Hong-Liang^Zhang, Yi-Men,Atomic-layer-deposited Al2O3 and HfO2 on InAlAs: A comparative study of interfacial and electrical characteristics:CHINESE PHYSICS B,2016,25(10)
- Guan, He ; Lv, Hong-Liang ; Guo, Hui ; Zhang, Yi-Men ; Zhang, Yu-Ming ; Wu, Li-Fan ,Interfacial and electrical characteristics of a HfO<inf>2</inf>/n-InAlAs MOS-capacitor with different dielectric thicknesses:Chinese Physics B,2015,24(12)
- Interface annealing characterization of Ti/Al/Au ohmic contacts to p-Type 4H-SiC:Journal of Semiconductors,2015,36(12)
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