Hits:

Institution:微电子学院

Title of Paper:Atomic-layer-deposited Al2O3 and HfO2 on InAlAs: A comparative study of interfacial and electrical characteristics

Journal:CHINESE PHYSICS B

First Author:Wu, Li-Fan^Zhang, Yu-Ming^Lv, Hong-Liang^Zhang, Yi-Men

Document Code:SCI WOS:000384227700071

Volume:25

Issue:10

ISSN:1674-1056

Translation or Not:No

Date of Publication:2016-01-01

Included Journals:SCI

Date:2018-06-08