Concentration of point defects in 4H-SiC characterized by a magnetic measurement
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Institution:微电子学院
Title of Paper:Concentration of point defects in 4H-SiC characterized by a magnetic measurement
Journal:AIP ADVANCES
First Author:Peng, B.^Jia, R. X.^Wang, Y. T.^Dong, L. P.^Hu, J. C.^Zhang, Y. M.
Document Code:SCI WOS:000385674300054
Volume:6
Issue:9
ISSN:2158-3226
Translation or Not:No
Date of Publication:2016-01-01
Included Journals:SCI
Date:2018-06-08