DRzUXrcElWMUi6aqEKIr5VVs9ZZnjkz3Tok59DkqFJXoOTVPqk7GWbAkw0A0
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Effect of Low Pressure on Surface Roughness and Morphological Defects of 4H-SiC Epitaxial Layers

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Institution:微电子学院

Title of Paper:Effect of Low Pressure on Surface Roughness and Morphological Defects of 4H-SiC Epitaxial Layers

Journal:MATERIALS

First Author:Hu, Jichao^Jia, Renxu^Xin, Bin^Peng, Bo^Wang, Yuehu^Zhang, Yuming

Document Code:SCI WOS:000382262000032

Volume:9

Issue:9

ISSN:1996-1944

Translation or Not:No

Date of Publication:2016-01-01

Included Journals:SCI

Date:2018-06-08

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