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Institution:微电子学院

Title of Paper:Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal-oxide-semiconductor devices

Journal:CHINESE PHYSICS B

First Author:Jia, Yifan^Lv, Hongliang^Niu, Yingxi^Li, Ling^Song, Qingwen^Tang, Xiaoyan^Li, Chengzhan^Zhao, Yanli^Xiao, Li^Wang, Liangyong^Tang, Guangming^Zhang, Yimen^Zhang, Yuming

Document Code:SCI WOS:000384226500070

Volume:25

Issue:9

ISSN:1674-1056

Translation or Not:No

Date of Publication:2016-01-01

Included Journals:SCI

Date:2018-06-08