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Institution:微电子学院

Title of Paper:Transport mechanisms of leakage current in Al2O3/InAlAs MOS capacitors

Journal:SOLID-STATE ELECTRONICS

First Author:Jin, Chengji^Lu, Hongliang^Zhang, Yimen^Zhang, Yuming^Guan, He^Wu, Lifan^Lu, Bin^Liu, Chen

Document Code:SCI WOS:000379785900018

Volume:123

Page Number:106-110

ISSN:0038-1101

Translation or Not:No

Date of Publication:2016-01-01

Included Journals:SCI

Date:2018-06-08