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High temperature characterization of normally-on 4H-SiC junction field-effect transistor

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Institution:微电子学院

Title of Paper:High temperature characterization of normally-on 4H-SiC junction field-effect transistor

Journal:SUPERLATTICES AND MICROSTRUCTURES

First Author:Zhang, Yimeng^Tang, Meiyan^Song, Qingwen^Tang, Xiaoyan^Lv, Hongliang^Liu, Sicheng

Document Code:SCI WOS:000390630200020

Volume:99

Page Number:113-117

ISSN:0749-6036

Translation or Not:No

Date of Publication:2016-01-01

Included Journals:SCI

Date:2018-06-08

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