Improved modeling on the RF behavior of InAs/AlSb HEMTs
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Institution:微电子学院
Title of Paper:Improved modeling on the RF behavior of InAs/AlSb HEMTs
Journal:SOLID-STATE ELECTRONICS
First Author:Guan, He; Lv, Hongliang; Zhang, Yuming; Zhang, Yimen
Document Code:SCI WOS:000363193300027
Volume:114
Page Number:155-162
ISSN:0038-1101
Translation or Not:No
Date of Publication:2015-01-01
Included Journals:SCI
Date:2018-06-08