Influence of oxidation temperature on the interfacial properties of n-type 4H-SiC MOS capacitors
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Institution:微电子学院
Title of Paper:Influence of oxidation temperature on the interfacial properties of n-type 4H-SiC MOS capacitors
Journal:Applied Surface Science
Document Code:EI 20165103138163
Volume:397
Page Number:175-182
Translation or Not:No
Date of Publication:2017-01-01
Included Journals:EI
Date:2018-06-08