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Study on reverse-biased gate leakage current mechanisms in Al2O3/InAlAs metal-oxide-semiconductor structures

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Institution:微电子学院

Title of Paper:Study on reverse-biased gate leakage current mechanisms in Al2O3/InAlAs metal-oxide-semiconductor structures

Journal:THIN SOLID FILMS

First Author:Jin, Chengji^Lu, Hongliang^Zhang, Yimen^Guan, He^Li, Zheng^Zhang, Yuming

Document Code:SCI WOS:000389610900007

Volume:619

Page Number:48-52

ISSN:0040-6090

Translation or Not:No

Date of Publication:2016-01-01

Included Journals:SCI

Date:2018-06-08

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