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Institution:微电子学院

Title of Paper:Investigation of Leakage Current Mechanisms in La2O3/SiO2/4H-SiC MOS Capacitors with Varied SiO2 Thickness

Journal:JOURNAL OF ELECTRONIC MATERIALS

First Author:Wang, Yucheng^Jia, Renxu^Zhao, Yanli^Li, Chengzhan^Zhang, Yuming

Document Code:SCI WOS:000385021300014

Volume:45

Issue:11

Page Number:5600-5605

ISSN:0361-5235

Translation or Not:No

Date of Publication:2016-01-01

Included Journals:SCI

Date:2018-06-08