h7h1aHMgoVHPlxldSqXIEhB7caPmGClmCgsAcpscR7yyxhxbmvxxxLyC9xA1
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Growth of thickness-controlled epitaxial graphene on on-axis 6H-SiC (C-face) substrate in graphite enclosure

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Institution:微电子学院

Title of Paper:Growth of thickness-controlled epitaxial graphene on on-axis 6H-SiC (C-face) substrate in graphite enclosure

Journal:JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

First Author:Hu, Yanfei^Zhang, Yuming^Guo, Hui^Chong, Laiyuan^Zhang, Chenxu^Zhang, Yimen

Document Code:SCI WOS:000377898000101

Volume:27

Issue:6

Page Number:6242-6248

ISSN:0957-4522

Translation or Not:No

Date of Publication:2016-01-01

Included Journals:SCI

Date:2018-06-08

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