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个人信息：Personal Information
教授
性别：男
毕业院校：2966
学历：博士研究生毕业
学位：工学博士学位
在职信息：在岗
所在单位：集成电路学部
学科：微电子学与固体电子学
扫描关注
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1）先进CMOS器件
2）FeFET储存器件/嵌入式存储阵列和芯片
3）存算一体/边缘计算芯片设计，外围电路设计以及流片
4）人工类脑器件、芯片算法、架构和芯片
5）先进低维微电子物理、材料和器件研究
- GeSn Quantum Well P-Channel Tunneling FETs Fabricated on Si(001) and (111) With Improved Subthreshold Swing.IEEE ELECTRON DEVICE LETTERS.2016,37(6):701-704
- Theoretical Investigation of Performance Enhancement in GeSn/SiGeSn Type-II Staggered Heterojunction Tunneling FET.IEEE TRANSACTIONS ON ELECTRON DEVICES.2016,63(1):303-310
- InN/InGaN complementary heterojunction-enhanced tunneling field-effect transistor with enhanced subthreshold swing and tunneling current.SUPERLATTICES AND MICROSTRUCTURES.2016,93:144-152
- Theoretical calculation of performance enhancement in lattice-matched SiGeSn/GeSn p-channel tunneling field-effect transistor with type-II staggered tunneling junction.JAPANESE JOURNAL OF APPLIED PHYSICS.2016,55(4)
- Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain.AIP ADVANCES.2015,5(5)
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