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个人信息Personal Information
教授
性别：男
毕业院校：2966
学历：博士研究生毕业
学位：博士研究生毕业
在职信息：在岗
所在单位：微电子学院
学科：微电子学与固体电子学
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研究领域
1）先进CMOS器件
2）FeFET储存器件/嵌入式存储阵列和芯片
3）存算一体/边缘计算芯片设计，外围电路设计以及流片
4）人工类脑器件、芯片算法、架构和芯片
5）先进低维微电子物理、材料和器件研究
- Han, Genquan^Wang, Yibo^Liu, Yan^Zhang, Chunfu^Feng, Qian^Liu, Mingshan^Zhao, Shenglei^Cheng, Buwen^Zhang, Jincheng^Hao, Yue,GeSn Quantum Well P-Channel Tunneling FETs Fabricated on Si(001) and (111) With Improved Subthreshold Swing:IEEE ELECTRON DEVICE LETTERS,2016,37(6):701-704
- Wang, Hongjuan^Han, Genquan^Liu, Yan^Hu, Shengdong^Zhang, Chunfu^Zhang, Jincheng^Hao, Yue,Theoretical Investigation of Performance Enhancement in GeSn/SiGeSn Type-II Staggered Heterojunction Tunneling FET:IEEE TRANSACTIONS ON ELECTRON DEVICES,2016,63(1):303-310
- Peng, Yue^Han, Genquan^Wang, Hongjuan^Zhang, Chunfu^Liu, Yan^Wang, Yibo^Zhao, Shenglei^Zhang, Jincheng^Hao, Yue,InN/InGaN complementary heterojunction-enhanced tunneling field-effect transistor with enhanced subthreshold swing and tunneling current:SUPERLATTICES AND MICROSTRUCTURES,2016,93:144-152
- Wang, Hongjuan^Han, Genquan^Wang, Yibo^Peng, Yue^Liu, Yan^Zhang, Chunfu^Zhang, Jincheng^Hu, Shengdong^Hao, Yue,Theoretical calculation of performance enhancement in lattice-matched SiGeSn/GeSn p-channel tunneling field-effect transistor with type-II staggered tunneling junction:JAPANESE JOURNAL OF APPLIED PHYSICS,2016,55(4)
- Han, Genquan; Wang, Yibo; Liu, Yan; Wang, Hongjuan; Liu, Mingshan; Zhang, Chunfu; Zhang, Jincheng; Cheng, Buwen; Hao, Yue,Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain:AIP ADVANCES,2015,5(5)
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