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个人信息：Personal Information
教授
性别：男
毕业院校：2966
学历：博士研究生毕业
学位：工学博士学位
在职信息：在岗
所在单位：集成电路学部
学科：微电子学与固体电子学
扫描关注
- [1]GeSn Quantum Well P-Channel Tunneling FETs Fabricated on Si(001) and (111) With Improved Subthreshold Swing.IEEE ELECTRON DEVICE LETTERS.2016,37 (6):701-704
- [2]Theoretical Investigation of Performance Enhancement in GeSn/SiGeSn Type-II Staggered Heterojunction Tunneling FET.IEEE TRANSACTIONS ON ELECTRON DEVICES.2016,63 (1):303-310
- [3]InN/InGaN complementary heterojunction-enhanced tunneling field-effect transistor with enhanced subthreshold swing and tunneling current.SUPERLATTICES AND MICROSTRUCTURES.2016,93 :144-152
- [4]Theoretical calculation of performance enhancement in lattice-matched SiGeSn/GeSn p-channel tunneling field-effect transistor with type-II staggered tunneling junction.JAPANESE JOURNAL OF APPLIED PHYSICS.2016,55 (4)
- [5]Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain.AIP ADVANCES.2015,5 (5)
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