![]() |
个人信息Personal Information
教授
性别:男
毕业院校:西安电子科技大学
学历:大学本科毕业
学位:大学本科毕业
在职信息:退休
所在单位:微电子学院
扫描关注
- Hu, Yanfei^Zhang, Yuming^Guo, Hui^Chong, LaiYuan^Zhang, Chenxu^Zhang, Yimen,Effects of substrate on the domains and electrical properties of epitaxial graphene formed on on-axis C-face 4H-SiC:JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2016,27(7):7595-7602
- Zhang, Yimeng ; Zhang, Yuming ; Zhang, Yimen ,Low power dissipation real time counter for sensor network application:Xi'an Dianzi Keji Daxue Xuebao/Journal of Xidian University,2015,42(6):66-69 and 1
- Hu, Yanfei^Zhang, Yuming^Guo, Hui^Chong, LaiYuan^Zhang, Yimen,Preparation of few-layer graphene on on-axis 4H-SiC (000(1)over-bar) substrates using a modified SiC-stacked method:MATERIALS LETTERS,2016,164:655-658
- Hu, Yanfei^Zhang, Yuming^Guo, Hui^Chong, Laiyuan^Zhang, Chenxu^Zhang, Yimen,Growth of thickness-controlled epitaxial graphene on on-axis 6H-SiC (C-face) substrate in graphite enclosure:JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2016,27(6):6242-6248
- Yuan, Hao^Song, Qingwen^Tang, Xiaoyan^Zhang, Yimeng^Zhang, Yimen^Zhang, Yuming,Design and experiment of 4H-SiC JBS diodes achieving a near-theoretical breakdown voltage with non-uniform floating limiting rings terminal:SOLID-STATE ELECTRONICS,2016,123:58-62
- Yu, Xinjiang^Lv, Hongliang^Zhang, Yuming^Zhang, Yimen^Qin, Zaiyang,Comparative study of atomic-layer-deposited HfO2/Al2O3, Hf0.8Al0.2Ox and Hf0.5Al0.5Ox on N-GaAs:SUPERLATTICES AND MICROSTRUCTURES,2016,99:58-61
- Wang, Yucheng^Jia, Renxu^Zhao, Yanli^Li, Chengzhan^Zhang, Yuming,Investigation of Leakage Current Mechanisms in La2O3/SiO2/4H-SiC MOS Capacitors with Varied SiO2 Thickness:JOURNAL OF ELECTRONIC MATERIALS,2016,45(11):5600-5605
- Lu, Bin^Lv, Hongliang^Zhang, Yuming^Zhang, Yimen^Liu, Chen,Comparison of HfAlO, HfO2/Al2O3, and HfO2 on n-type GaAs using atomic layer deposition:SUPERLATTICES AND MICROSTRUCTURES,2016,99:54-57
- Jin, Chengji^Lu, Hongliang^Zhang, Yimen^Guan, He^Li, Zheng^Zhang, Yuming,Study on reverse-biased gate leakage current mechanisms in Al2O3/InAlAs metal-oxide-semiconductor structures:THIN SOLID FILMS,2016,619:48-52
- Huang, Haili^Tang, Xiaoyan^Guo, Hui^Zhang, Yimen^Zhang, Yimeng^Zhang, Yuming,Design and spectrum calculation of 4H-SiC thermal neutron detectors using FLUKA and TCAD:NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT,2016,833:192-198