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Professor Supervisor of Doctorate Candidates Supervisor of Master's Candidates
Scientific Research
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- Jiang, Teng^Xu, Shengrui^Zhang, Jincheng^Li, Peixian^Huang, Jun^Ren, Zeyang^Fu, Mengdi^Zhu, Jiaduo^Shan, Hengsheng^Zhao, Ying^Hao, Yue,Spatial distribution of crystalline quality in N-type GaN grown on patterned sapphire substrate:OPTICAL MATERIALS EXPRESS,2016,6(6):1817-1826
- Xu, Shengrui^Jiang, Teng^Lin, Zhiyu^Zhao, Ying^Yang, Lilian^Zhang, Jincheng^Li, Peixian^Hao, Yue,Current mapping of nonpolar alpha-plane and polar c-plane GaN films by conductive atomic force microscopy:JOURNAL OF CRYSTAL GROWTH,2016,451:13-17
- Jiang, Teng^Xu, Shengrui^Zhang, Jincheng^Li, Peixian^Huang, Jun^Niu, Mutong^Meng, Xijun^Chen, Zhibin^Zhu, Jiaduo^Zhao, Ying^Zhang, Yachao^Hao, Yue,Temperature dependence of the Raman-active modes in the semipolar (11(2)over-bar2) plane GaN Film:JOURNAL OF APPLIED PHYSICS,2016,120(24)
- Jiang, Teng^Xu, Sheng-rui^Zhang, Jin-cheng^Xie, Yong^Hao, Yue,Spatially resolved and orientation dependent Raman mapping of epitaxial lateral overgrowth nonpolar a-plane GaN on r-plane sapphire:SCIENTIFIC REPORTS,2016,6
- Jiang, Teng^Xu, Shengrui^Zhang, Jincheng^Li, Peixian^Huang, Jun^Ren, Zeyang^Zhu, Jiaduo^Chen, Zhibin^Zhao, Ying^Hao, Yue,Morphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4 degrees misoriented sapphire substrate:AIP ADVANCES,2016,6(3)
- Xu, Sheng-Rui^Zhao, Ying^Jiang, Teng^Zhang, Jin-Cheng^Li, Pei-Xian^Hao, Yue,Improved Semipolar (11 (2)over-bar2) GaN Quality Grown on m-Plane Sapphire Substrates by Metal Organic Chemical Vapor Deposition Using Self-Organized SiN (x) Interlayer:CHINESE PHYSICS LETTERS,2016,33(6)
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