Morphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4 degrees misoriented sapphire substrate
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Institution:微电子学院
Title of Paper:Morphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4 degrees misoriented sapphire substrate
Journal:AIP ADVANCES
First Author:Jiang, Teng^Xu, Shengrui^Zhang, Jincheng^Li, Peixian^Huang, Jun^Ren, Zeyang^Zhu, Jiaduo^Chen, Zhibin^Zhao, Ying^Hao, Yue
Document Code:SCI WOS:000373684200096
Volume:6
Issue:3
ISSN:2158-3226
Translation or Not:No
Date of Publication:2016-01-01
Included Journals:SCI
Date:2018-06-08
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