Improved Semipolar (11 (2)over-bar2) GaN Quality Grown on m-Plane Sapphire Substrates by Metal Organic Chemical Vapor Deposition Using Self-Organized SiN (x) Interlayer
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Institution:微电子学院
Title of Paper:Improved Semipolar (11 (2)over-bar2) GaN Quality Grown on m-Plane Sapphire Substrates by Metal Organic Chemical Vapor Deposition Using Self-Organized SiN (x) Interlayer
Journal:CHINESE PHYSICS LETTERS
First Author:Xu, Sheng-Rui^Zhao, Ying^Jiang, Teng^Zhang, Jin-Cheng^Li, Pei-Xian^Hao, Yue
Document Code:SCI WOS:000378778800037
Volume:33
Issue:6
ISSN:0256-307X
Translation or Not:No
Date of Publication:2016-01-01
Included Journals:SCI
Date:2018-06-08