Hits:
Institution:微电子学院
Title of Paper:C-Implanted N-Polar GaN Films Grown by Metal Organic Chemical Vapor Deposition
Journal:CHINESE PHYSICS LETTERS
First Author:Zhao, Ying^Xu, Sheng-Rui^Lin, Zhi-Yu^Zhang, Jin-Cheng^Jiang, Teng^Fu, Meng-Di^Zhu, Jia-Duo^Lu, Qin^Hao, Yue
Document Code:SCI WOS:000390931000031
Volume:33
Issue:12
ISSN:0256-307X
Translation or Not:No
Date of Publication:2016-01-01
Included Journals:SCI
Date:2018-06-08
Prev One:Improved Semipolar (11 (2)over-bar2) GaN Quality Grown on m-Plane Sapphire Substrates by Metal Organic Chemical Vapor Deposition Using Self-Organized SiN (x) Interlayer
Next One:Growth of a-Plane GaN Films on r-Plane Sapphire by Combining Metal Organic Vapor Phase Epitaxy with the Hydride Vapor Phase Epitaxy