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Title:基于a面6H-SiC衬底上a面GaN缓冲层上InN半导体器件的制备方法

Institution:100900

Teaching and Research Group:1114

Scope of Patent:1

First Author:许晟瑞

Application Number:201310237610.9

Number of Inventors:6

Service Invention or Not:No

Application Date:2013-06-14

Date:2018-06-01