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Title:离子注入形成N型重掺杂漂移层台面的UMOSFET制备方法

Institution:100900

Teaching and Research Group:1114

Scope of Patent:1

First Author:汤晓燕

Application Number:201410166460.1

Number of Inventors:7

Service Invention or Not:No

Application Date:2014-04-21

Authorization Date:2016-09-07

Date:2020-06-04