3rt9xRYi6x2sJB77RYevauBiXRWhcznDp6pKg3fmF6Dtd99t4Qb9ZFB5sazu
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一种具有深沟槽的浮动结碳化硅SBD器件

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Title:一种具有深沟槽的浮动结碳化硅SBD器件

Institution:100900

Teaching and Research Group:1114

Scope of Patent:1

First Author:汤晓燕

Application Number:201410166378.9

Number of Inventors:5

Service Invention or Not:No

Application Date:2014-04-21

Authorization Date:2017-10-13

Date:2020-06-04

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