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Title:N型隐埋沟道的碳化硅DEMOSFET器件及制备方法

Institution:100900

Teaching and Research Group:1114

Scope of Patent:1

First Author:汤晓燕

Application Number:201110122724.X

Number of Inventors:2

Service Invention or Not:No

Application Date:2011-05-12

Authorization Date:2013-06-26

Date:2018-06-01