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Title:外延沟道的SiCIEMOSFET器件及制备方法

Institution:100900

Teaching and Research Group:1114

Scope of Patent:1

First Author:汤晓燕

Application Number:201110171696

Number of Inventors:3

Service Invention or Not:No

Application Date:2011-06-23

Authorization Date:2013-04-17

Date:2018-06-01