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Title:N沟道积累型SiC IEMOSFET器件及制备方法

Institution:100900

Teaching and Research Group:1114

Scope of Patent:1

First Author:汤晓燕

Application Number:201110122219.5

Number of Inventors:2

Service Invention or Not:No

Application Date:2011-05-12

Authorization Date:2013-03-20

Date:2018-06-01