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外延生长形成N型重掺杂漂移层台面的UMOSFET器件制备方法

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Title:外延生长形成N型重掺杂漂移层台面的UMOSFET器件制备方法

Institution:100900

Scope of Patent:1

First Author:蒋明伟

Application Number:201410166481.3

Number of Inventors:7

Service Invention or Not:No

Application Date:2014-04-21

Authorization Date:2016-08-24

Date:2020-06-04

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