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Influence of three-dimensional p-buried layer pattern on the performance of 4H-SiC floating junction Schottky barrier diode

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Institution:微电子学院

Title of Paper:Influence of three-dimensional p-buried layer pattern on the performance of 4H-SiC floating junction Schottky barrier diode

Journal:JAPANESE JOURNAL OF APPLIED PHYSICS

First Author:Yang, Shuai; Zhang, Yuming; Song, Qingwen; Tang, Xiaoyan; Zhang, Yimen; Huo, Tianjia; Liu, Sicheng; Yuan, Hao

Document Code:SCI WOS:000362285100002

Volume:54

Issue:10

ISSN:0021-4922

Translation or Not:No

Date of Publication:2015-01-01

Included Journals:SCI

Date:2018-06-08

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