nsEzTL0DubbODIcnKcyWARvJcfcYLRbQPRxPwckjqWECOEC0V3ojgDN48Jlt
Current position: Home >> Scientific Research >> Paper Publications

Influence of charge imbalance on breakdown voltage of 4H-SiC semi-superjunction VDMOSFET

Hits:

Institution:微电子学院

Title of Paper:Influence of charge imbalance on breakdown voltage of 4H-SiC semi-superjunction VDMOSFET

Journal:Wuli Xuebao/Acta Physica Sinica

First Author:Yang, Shuai ; Tang, Xiao-Yan ; Zhang, Yu-Ming ; Song, Qing-Wen ; Zhang, Yi-Men

Document Code:EI 20145200366364

Volume:63

Issue:20

Translation or Not:No

Date of Publication:2014-01-01

Included Journals:EI

Date:2018-06-08

Prev One:Influence of three-dimensional p-buried layer pattern on the performance of 4H-SiC floating junction Schottky barrier diode