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Institution:微电子学院

Title of Paper:Analytical models of on-resistance and breakdown voltage for 4H-SiC floating junction Schottky barrier diodes

Journal:SOLID-STATE ELECTRONICS

First Author:Yuan Hao; Tang Xiaoyan; Song Qingwen; Zhang Yimen; Zhang Yuming; Yang Fei; Niu Yingxi

Document Code:SCI WOS:000346547400014

Volume:103

Page Number:83-89

ISSN:0038-1101

Translation or Not:No

Date of Publication:2015-01-01

Included Journals:SCI

Date:2018-06-08