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Title:一种基于硅通孔的三维耦合器及其制备方法

Institution:微电子学院

Scope of Patent:三维集成电路

School Sign:西安电子科技大学

Type of Patent:Invent

State of Patent:Authorized patents

Application Number:201811246791.0

Authorization Number:CN109546278A

Number of Inventors:5

Service Invention or Not:No

Application Date:2018-10-25

Publication Date:2019-03-29

Authorization Date:2021-04-29

Date:2021-04-29