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Title:一种屏蔽差分硅通孔结构及制作方法

Institution:微电子学院

Scope of Patent:三维集成电路

School Sign:西安电子科技大学

Type of Patent:Invent

State of Patent:Authorized patents

Application Number:201610300266 .7

Authorization Number:CN 105810663 B

Number of Inventors:5

Service Invention or Not:No

Application Date:2016-05-06

Publication Date:2016-07-27

Authorization Date:2018-10-16

Date:2018-12-03