李祥东
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教授
博士生导师
硕士生导师
- 主要任职：广州第三代半导体创新中心副主任
- 性别：男
- 学历：博士研究生毕业
- 学位：博士研究生毕业
- 在职信息：在岗
- 所在单位：广州研究院
- 入职时间： 2021-03-01
- 学科：微电子学与固体电子学. 集成电路系统设计
- 办公地点：广州市黄埔区中新广州知识城广州第三代半导体创新中心
- 电子邮箱：8bbd7b71a5e84fa6e559ddc4e5f9162c23abc032d340171dc1cf9f9848fdcb6fefed81207bfe10f10a0430a90214088c090409312f23a507af977f68588e88d5456b6541512cf125968cbd5ca1e0b6cc2d293e0eb7cd577dbfdbc9c936d0ae53079ac88320445d054a74544083cdb5efdf0b02c49917d336d39c52552d6231db
访问量：
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[1]Balancing Threshold Voltage And On-resistance of P-gan Gate Hemts Via Mg Doping Engineering:IEEE Transactions on Electron Devices,2025
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[2]Optimization of Low-voltage P-gan Gate Hemts For High-efficiency Secondary Power Conversion:Micromachines,2025,16(5)
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[3]Experimental and Simulation Study on the Failure Mechanism of GaN HD-GIT Under Overcurrent Stress:IEEE TRANSACTIONS ON ELECTRON DEVICES,2025,72(9)
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[4]Dynamic Monolayer Wse2 Electrolyte-gated Transistor With Coexistent Double Relaxation Timescale For Enhanced Physical Reservoir Computing:Small,2025
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[5]High-performance Gan Pct-sbd Temperature Sensors by Decreasing the Density of Nitrogen Vacancies in the Algan Layer:IEEE Sensors Journal,2025,25(7):10613-10618
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[6]Enhancement-mode Gan/algan P-channel Field Effect Transistors With Id > 110 Ma/mm Achieved Through Source/drain Tunnel Junction Contacts:Applied Physics Letters,2025,126(15)
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[7]Inaln/gan Mishemts With 120 Nm T-shape Recessed Gates on Silicon With Excellent Mm-wave Noise Performance:IEEE Microwave And Wireless Technology Letters,2024,34(4):399-402
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[8]Novel In-Situ AlN/p-GaN Gate HEMTs With Threshold Voltage of 3.9 V and Maximum Applicable Gate Voltage of 12.1 V:IEEE TRANSACTIONS ON ELECTRON DEVICES,2023,70(2):424-428
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[9]GaN双异质结高电子迁移率器件:第二十届全国半导体物理学术会议论文集,2020:154-154
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[10]Investigating the Failure Mechanism of P-gan Gate Hemts Under High Power Stress With a Transparent Ito Gate:Micromachines,2023,14(5)