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个人信息Personal Information
教授 博士生导师 硕士生导师
性别：男
学历：博士研究生毕业
学位：博士研究生毕业
在职信息：在岗
所在单位：先进材料与纳米科技学院
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- Orientation independent growth of uniform ferroelectric Hf0.5Zr0.5O2 thin films on silicon for high-density three-dimensional memory applications:Advanced Functional Materials,2022,32(49):2209604
- Intrinsic 90° charged domain wall and its effects on ferroelectric properties:Acta Materialia,2022,232:117920-1–117920-11
- Robustly stable ferroelectric polarization states enable long-term nonvolatile storage against radiation in HfO2-based ferroelectric field-effect transistors:ACS Applied Materials and Interfaces,2022,14(45):51459–51467
- Robustly stable intermediate memory states in HfO2-based ferroelectric field-effect transistors:Journal of Materiomics,2022,8(3):685–692
- Flux-closure domains in PbTiO3/SrTiO3 multilayers mediated without tensile strain:Journal of Physical Chemistry C,2022,126(9):4630–4637
- Interface effects induced by a ZrO2 seed layer on the phase stability and orientation of HfO2 ferroelectric thin films: a first-principles study:Physical Review Applied,2021,16(4):044048-1–044048-9
- Hf0.5Zr0.5O2-based ferroelectric field-effect transistors with HfO2 seed layers for radiation-hard nonvolatile memory applications:IEEE Transactions on Electron Devices,2021,68(9):4368–4372
- Mechanical manipulation of nano-twinned ferroelectric domain structures for multilevel data storage:Advanced Functional Materials,31(19):2011029-1–2011029-9
- Electric field gradient-controlled domain switching for size effect-resistant multilevel operations in HfO2-based ferroelectric field-effect transistor:Advanced Functional Materials,31(17):2011077-1–2011077-9
- Improvement of remanent polarization of CeO2-HfO2 solid solution thin films on Si substrates by chemical solution deposition:Applied Physics Letters,117(21):212904-1–212904-6