周久人
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教授
博士生导师
硕士生导师
- 性别：男
- 毕业院校：西安电子科技大学
- 学历：博士研究生毕业
- 学位：博士研究生毕业
- 在职信息：在岗
- 所在单位：杭州研究院
- 入职时间： 2021-11-01
- 学科：微电子学与固体电子学
- 办公地点：西电杭州研究院科研楼A2-601-2（旅学路177号）
- 联系方式：b2f878dce9d7b4819692a0d336096d5fe63c187678bc6c5bf7defcb7793b81bea00feee72a2f96e6ad36fcd43805acba172ef5832cdbcaf9cd5140a4c02295f3089bc55c9c489fc7bd5bff6761ec46ff4685eca2b27d9b3005717c238bc0aee620a687156095d9959f7acb68d675d34042c69a21bb50dc1f1f8121ed3c231caa
- 电子邮箱：3a68afec5f7dba4b82410785a7ada7fe1a24599ee934d8de6db6b799d299b3243a99a0a4fae80c5ab49e65dfacd3def264452fdb6490012c52ecb39f3a3f6d995fa5b14617d26d24ee7e393c204689a04715edf6addf63aac23e98b3a46f2b9e16b5e5b5b694bdd8a58c230dd7559f471a6f27aae53bb7f8b507a2314f1becf4
访问量：
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[1]A Modeling Study of Stacked Cu-cnt Tsv on Electrical, Thermal, And Reliability Analysis:IEEE Transactions on Electron Devices,2023
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[2]A Modeling Study on Electrical And Thermal Behavior of Cnt Tsv For Multilayer Structure:IEEE Transactions on Electron Devices,2023
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[3]Ferroelectric-semiconductor Tunnel Junction With Ultrathin Semiconductor Electrode Engineering:IEEE Electron Device Letters,2022,43(10):1764-1767
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[4]Photoelectric In-memory Logic and Computing Achieved in HfO2-based Ferroelectric Optoelectronic Memcapacitors:IEEE EDL,2024
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[5]Integration of Ferroelectric Al0.8Sc0.2N on Si (001) Substrate.[J]:IEEE EDL,2024
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[6]Energy-Efficient Reconfigurable Transistor Achieving Sub-Nanojoule Consumption per Programming Event.[J]:IEEE EDL,2024
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[7]Ferroelectric-Semiconductor Tunnel Junction With Ultrathin Semiconductor Electrode Engineering.[J]:IEEE EDL,2022
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[8]Depolarization Field Engineered Ferroelectric Mechanical Transistor with 0.3-Volts VDD.[J]:IEEE EDL,2023
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[9]Low Thermal Budget Reconfigurable Fully Depleted Silicon on Insulator Field-Effect-Transistors With Embedded Boolean Logic.[J]:IEEE EDL,2023
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[10]Low Thermal Budget Reconfigurable Fully Depleted Silicon on Insulator Field-effect-transistors With Embedded Boolean Logic:IEEE Electron Device Letters,2023,44(2):321-324