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具有双InGaN子量子阱的共振隧穿二极管及其制作方法

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Title:具有双InGaN子量子阱的共振隧穿二极管及其制作方法

Institution:100900

Teaching and Research Group:1114

Scope of Patent:1

First Author:杨林安

Application Number:201410696211.3

Number of Inventors:4

Service Invention or Not:No

Application Date:2014-11-26

Authorization Date:2017-06-16

Date:2020-06-04

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