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基于notch结构的GaN耿氏二极管及制作方法

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Title:基于notch结构的GaN耿氏二极管及制作方法

Institution:100900

Teaching and Research Group:1114

Scope of Patent:1

First Author:杨林安

Application Number:201510117491.2

Number of Inventors:4

Service Invention or Not:No

Application Date:2015-03-15

Authorization Date:2017-10-24

Date:2020-06-04

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