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基于AlGaN/GaN超晶格电子发射层GaN耿氏二极管及制作方法

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Title:基于AlGaN/GaN超晶格电子发射层GaN耿氏二极管及制作方法

Institution:100900

Teaching and Research Group:1114

Scope of Patent:1

First Author:杨林安

Application Number:201410270942.1

Number of Inventors:5

Service Invention or Not:No

Application Date:2014-06-18

Authorization Date:2017-01-11

Date:2020-06-04

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