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基于双线性渐变Al组分AlGaN电子发射层GaN耿氏二极管及制作方法

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Title:基于双线性渐变Al组分AlGaN电子发射层GaN耿氏二极管及制作方法

Institution:100900

Teaching and Research Group:1114

Scope of Patent:1

First Author:杨林安

Application Number:201410272508.7

Number of Inventors:5

Service Invention or Not:No

Application Date:2014-06-18

Date:2018-06-01

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