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Title:基于SiC衬底的太赫兹GaN耿氏二极管及其制作方法

Institution:100900

Teaching and Research Group:1114

Scope of Patent:1

First Author:杨林安

Application Number:201210005728.4

Number of Inventors:4

Service Invention or Not:No

Application Date:2012-01-10

Authorization Date:2013-12-25

Date:2018-06-01