Hits:

Title:基于SiC衬底的太赫兹GaN耿氏二极管及其制作方法

Institution:微电子学院

Scope of Patent:国内

First Author:杨林安

Type of Patent:发明专利

Application Number:201210005728.4

Number of Inventors:4

Service Invention or Not:No

Application Date:2012-01-10

Authorization Date:2013-12-25

Date:2018-06-01