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个人信息Personal Information
教授 博士生导师 硕士生导师
性别：男
毕业院校：西安电子科技大学
学历：博士研究生毕业
学位：博士研究生毕业
在职信息：在岗
所在单位：微电子学院
入职时间：2007-07-01
学科：微电子学与固体电子学
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- 李昂,Lattice-matched AlInN_GaN multi-channel__heterostructure and HEMTs with low onresistance:Applied physics Letter,2021，(119)
- GaN-based super-lattice Schottky barrier diode with low forward voltage of 0.81V:Superlattices and Microstructures,2021,"Vol. 156,(106952)
- Comparative Study of Characteristics and Interface States with and without Post-Gate-Annealing Treatment for AlGaN/GaN-Recessed Metal–Insulator–Semiconductor High Electron Mobility Transistors Using HfO2 Gate Insulator on Si Substrates:PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2020,1900981
- Effects of Recess Depths on Performance of AlGaNGaN Power MIS-HEMTs on the Si Substrates and Threshold Voltage Model of Different Recess Depths for the Using HfO2 Gate Insulator:Solid State Electronics,2020,"Vol,163,(107649):pp:1-6"
- Wang, Chong; He, Yunlong; Zheng, Xuefeng; Zhao, Mengdi; Mi, Minhan; Li, Xiangdong; Mao, Wei; Ma, Xiaohua; Hao, Yue,Low ohmic-contact resistance in AlGaN/GaN high electron mobility transistors with holes etching in ohmic region:ELECTRONICS LETTERS,2015,51(25):2146-2147
- GaN-based FinFET with double-channel AlGaN/GaN heterostructure:Electronics Letters,2018,54(5)
- Wang Chong^Zhao Meng-Di^Pei Jiu-Qing^He Yun-Long^Li Xiang-Dong^Zheng Xue-Feng^Mao Wei^Ma Xiao-Hua^Zhang Jin-Cheng^Hao Yue,Enhancement mode AlGaN/GaN double heterostructure high electron mobility transistor with F plasma treatment:ACTA PHYSICA SINICA,2016,65(3)
- Wang, Chong ; Zhao, Meng-Di ; He, Yun-Long ; Zheng, Xue-Feng ; Zhang, Kun ; Wei, Xiao-Xiao ; Mao, Wei ; Ma, Xiao-Hua ; Zhang, Jin-Cheng ; Hao, Yue ,Photoresponse and trap characteristics of transparent AZO-gated AlGaN/GaN HEMT:Chinese Physics B,2016,25(10)
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