陆小力
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教授
博士生导师
硕士生导师
- 性别：男
- 毕业院校：中国科学技术大学
- 学历：博士研究生毕业
- 学位：博士研究生毕业
- 在职信息：在岗
- 所在单位：微电子学院
- 入职时间： 2011-12-01
- 学科：微电子学与固体电子学. 集成电路系统设计. 电磁场与微波技术
- 办公地点：南校区宽禁带半导体国家工程研究中心
- 电子邮箱：73da6802c274f0e7710142b759cda38e0d038513442dbca87bf0a1d67efda07eed6239b31b67528ff23de8dc832b82480fec17ab7d573b3e39ddb4df213835e63f74dc5d870627f749342c9ee7461e861621375c3ec200b8a9657a447fc5e863002fa707842a002f1112e4e68acfc3f9ac406bfecc5e70b562d33540f2056dca
访问量：
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[1]Non-conventional Mechanism of Ferroelectric Fatigue Via Cation Migration:Nature Communications,2019,10(1):3064 (8 pp.)
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[2]Atomically Control of Surface Morphology in Ga2o3 Epi-layers With High Doping Activation Ratio:Journal of Alloys And Compounds,2021,855(P1)
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[3]Epitaxial Lift-off of Centimeter-scaled Spinel Ferrite Oxide Thin Films For Flexible Electronics:Advanced Materials,2017,29(33)
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[4]Flexible Quasi-two-dimensional Cofe2o4 Epitaxial Thin Films For Continuous Strain Tuning of Magnetic Properties:Acs Nano,2017,11(8):8002-8009
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[5]Non-conventional Mechanism of Ferroelectric Fatigue Via Cation Migration:Nature Communications,2019,10(1):3064 (8 pp.)
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[6]Ferroelectric Domain Induced Giant Enhancement of Two-dimensional Electron Gas Density in Ultrathin-barrier Algan/gan Heterostructures:Applied Surface Science,2022,586
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[7]Atomically Control of Surface Morphology in Ga2o3 Epi-layers With High Doping Activation Ratio:Journal of Alloys And Compounds,2021,855(P1)
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[8]Stress Enhanced Photoelectric Response in Flexible Aln Single-crystalline Thin Films:Applied Surface Science,2022,585
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[9]Ferroelectric passivation layer derived high performance AlGaN/GaN heterojunction field-effect transistor:Applied Physics Letters,2023,123(21)