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Title:一种制备基于65nm工艺的冗余掺杂抗辐照MOS场效应管的方法

Institution:100900

Teaching and Research Group:1114

Scope of Patent:1

First Author:刘红侠

Application Number:201510107916.1

Number of Inventors:3

Service Invention or Not:No

Application Date:2015-03-12

Authorization Date:2017-11-21

Date:2020-06-04