Personal Information
Professor Supervisor of Doctorate Candidates Supervisor of Master's Candidates
Paper Publications
- Fan, Xiaojiao; Liu, Hongxia; Zhong, Bo; Fei, Chenxi; Wang, Xing; Wang, Qianqiong,Optical characteristics of H2O-based and O-3-based HfO2 films deposited by ALD using spectroscopy ellipsometry:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2015,119(3):957-963
- Chen, Yu-Hai^Liu, Hong-Xia^Xu, Han-Chen-Xi^Wang, Shu-Long^Fan, Xiao-Jiao^Zhao, Lu^Feng, Xing-yao,Flat band voltage modulation of AlGaN/GaN MOS capacitor with stacked Al2O3/La2O3 high dielectric structures:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2016,48:9-13
- Fei, Chenxi^Liu, Hongxia^Wang, Xing^Zhao, Dongdong^Wang, Shulong,Influences of rapid thermal annealing on the characteristics of Al2O3\La2O3\Si and La2O3\Al2O3\Si films deposited by atomic layer deposition:JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2016,27(8):8550-8558
- Zhao, Lu ; Liu, Hongxia ; Wang, Xing ; Feng, Xingyao ; Fei, Chenxi ,Band alignments of O<inf>3</inf>-based and H<inf>2</inf>O-based amorphous LaAlO<inf>3</inf>films on silicon by atomic layer deposition:Journal of Materials Science,2017,28(1):803-807
- Yang, Zhaonian ; Liu, Hongxia ; Zhu, Jia ,3脳VDD-tolerant ESD detection circuit in a 90 nm CMOS process:Xi'an Dianzi Keji Daxue Xuebao/Journal of Xidian University,2015,42(1):56-61 and 20
- Yang, Zhaonian ; Liu, Hongxia ; Zhu, Jia ; Fei, Chenxi ,Voltage triggered ESD detection circuits in a 90 nm CMOS process:Xi'an Dianzi Keji Daxue Xuebao/Journal of Xidian University,2015,42(3):54-60
- Zhao, Dongdong ; Liu, Hongxia ; Wang, Qianqiong ; Wang, Shulong ; Fei, Chenxi ; Chen, Shupeng ,Simulation of displacement damage in nanoscale MOSFET caused by galactic cosmic rays:Journal of Computational and Theoretical Nanoscience,2016,13(8):5242-5246
- Wang, Xing ; Liu, Hongxia ; Zhao, Lu ; Fei, Chenxi ; Feng, Xingyao ; Chen, Shupeng ,Band alignments of La<inf>x</inf>Al<inf>y</inf>O films on Si substrates grown by atomic layer deposition with different La/Al atomic ratios:Journal of Materials Science,2017,28(6):4702-4705
- Fan, Xiaojiao; Liu, Hongxia; Fei, Chenxi; Zhong, Bo; Wang, Xing; Wang, Qianqiong,Observation of Optical Properties of Neodymium Oxide with Spectroscopic Ellipsometry:JOURNAL OF ELECTRONIC MATERIALS,2015,44(8):2592-2597
- Xin, Yan-Hui ; Liu, Hong-Xia ; Wang, Shu-Long ; Fan, Xiao-Jiao ,Two-dimensional model of symmetrical double-gate strained Si single Halo metal-oxide semiconductor field effect transistor with gate stack dielect:Wuli Xuebao/Acta Physica Sinica,2014,63(24):248502
- Fei, Chenxi; Liu, Hongxia; Wang, Xing; Fan, Xiaojiao,The influence of process parameters and pulse ratio of precursors on the characteristics of La1-x Al (x) O-3 films deposited by atomic layer deposition:NANOSCALE RESEARCH LETTERS,2015,10:1-9
- Li, Wei^Liu, Hongxia^Wang, Shulong^Chen, Shupeng,Analog/RF performance of four different Tunneling FETs with the recessed channels:SUPERLATTICES AND MICROSTRUCTURES,2016,100:1238-1248
- Invariant object recognition based on combination of sparse DBN and SOM with temporal trace rule:Multimedia Tools and Applications,2017,76(9):12017-12034
- Zhao, Dongdong ; Liu, Hongxia ; Wang, Qianqiong ; Wang, Shulong ; Fei, Chenxi ,Molecular dynamics simulation of swift heavy ion irradiation effects on amorphous Nano-SiO<inf>2</inf>film:International Journal of Simulation,2015,16(2):11.1-11.5
- Wang, Xing; Liu, Hong-Xia; Fei, Chen-Xi; Yin, Shu-Ying; Fan, Xiao-Jiao,Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer:NANOSCALE RESEARCH LETTERS,2015,10
- Fan, Xiaojiao; Liu, Hongxia; Zhong, Bo; Fei, Chenxi; Wang, Xing; Wang, Qianqiong,Effect of Al addition in HfO2 on the optical properties of the dielectrics using spectroscopy ellipsometry:MATERIALS RESEARCH EXPRESS,2015,2(4)
- Zhao, Dongdong; Liu, Hongxia; Wang, Shulong; Wang, Qianqiong; Fei, Chenxi; Wang, Xing; Chen, Shupeng,Molecular dynamics simulation of latent track formation in bilayer graphene:IEICE ELECTRONICS EXPRESS,2015,12(22)
- Zhao, Dongdong^Liu, Hongxia^Wang, Qianqiong^Wang, Shulong^Fei, Chenxi^Chen, Shupeng,Multiscale simulations of swift heavy ion irradiation effect on bilayer graphene:IEICE ELECTRONICS EXPRESS,2016,13(8)
- Fei, Chen-Xi^Liu, Hong-Xia^Wang, Xing^Zhao, Dong-Dong^Wang, Shu-Long^Chen, Shu-Peng,Influences of different structures on the characteristics of H2O-based and O-3-based LaxAlyO films deposited by atomic layer deposition:CHINESE PHYSICS B,2016,25(5)
- Feng, Xing-Yao^Liu, Hong-Xia^Wang, Xing^Zhao, Lu^Fei, Chen-Xi^Liu, He-Lei,Impacts of Annealing Conditions on the Flat Band Voltage of Alternate La2O3/Al2O3 Multilayer Stack Structures:NANOSCALE RESEARCH LETTERS,2016,11
- Wang, Xing^Liu, Hongxia^Fei, Chenxi^Zhao, Lu^Chen, Shupeng^Wang, Shulong,Electrical properties and interfacial issues of high-k/Si MIS capacitors characterized by the thickness of Al2O3 interlayer:AIP ADVANCES,2016,6(6)
- Wang, Qian-Qiong^Liu, Hong-Xia^Chen, Shu-Peng^Wang, Shu-Long^Fei, Chen-Xi^Zhao, Dong-Dong,Effects of total dose irradiation on the threshold voltage of H-gate SOI NMOS devices:NUCLEAR SCIENCE AND TECHNIQUES,2016,27(5)
- Wu, Hongbing^Liu, Hongxia,An Improved Bandgap Reference with Curvature-Compensated and High Power Supply Rejection:JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS,2016,25(11)
- Predictions for proton and heavy ions induced SEUs in 65 nm SRAMs:Journal of Semiconductors,2015,36(11)
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