Hits:

Affiliation of Author(s):微电子学院

Title of Paper:Theoretical Investigation of Performance Enhancement in GeSn/SiGeSn Type-II Staggered Heterojunction Tunneling FET

Journal:IEEE TRANSACTIONS ON ELECTRON DEVICES

First Author:Wang, Hongjuan^Han, Genquan^Liu, Yan^Hu, Shengdong^Zhang, Chunfu^Zhang, Jincheng^Hao, Yue

Indexed by:Article

Document Code:SCI WOS:000367259600039

Volume:63

Issue:1

Page Number:303-310

ISSN No.:0018-9383

Translation or Not:no

Date of Publication:2016-01-01

Included Journals:SCI