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Affiliation of Author(s):微电子学院

Title of Paper:InN/InGaN complementary heterojunction-enhanced tunneling field-effect transistor with enhanced subthreshold swing and tunneling current

Journal:SUPERLATTICES AND MICROSTRUCTURES

First Author:Peng, Yue^Han, Genquan^Wang, Hongjuan^Zhang, Chunfu^Liu, Yan^Wang, Yibo^Zhao, Shenglei^Zhang, Jincheng^Hao, Yue

Indexed by:Article

Document Code:SCI WOS:000376213000018

Volume:93

Page Number:144-152

ISSN No.:0749-6036

Translation or Not:no

Date of Publication:2016-01-01

Included Journals:SCI