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Affiliation of Author(s):微电子学院

Title of Paper:Theoretical calculation of performance enhancement in lattice-matched SiGeSn/GeSn p-channel tunneling field-effect transistor with type-II staggered tunneling junction

Journal:JAPANESE JOURNAL OF APPLIED PHYSICS

First Author:Wang, Hongjuan^Han, Genquan^Wang, Yibo^Peng, Yue^Liu, Yan^Zhang, Chunfu^Zhang, Jincheng^Hu, Shengdong^Hao, Yue

Indexed by:Proceedings Paper

Document Code:SCI WOS:000373929400051

Volume:55

Issue:4

ISSN No.:0021-4922

Translation or Not:no

Date of Publication:2016-01-01

Included Journals:SCI