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Affiliation of Author(s):微电子学院

Title of Paper:Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain

Journal:AIP ADVANCES

First Author:Han, Genquan; Wang, Yibo; Liu, Yan; Wang, Hongjuan; Liu, Mingshan; Zhang, Chunfu; Zhang, Jincheng; Cheng, Buwen; Hao, Yue

Indexed by:Article

Document Code:SCI WOS:000355568100065

Volume:5

Issue:5

ISSN No.:2158-3226

Translation or Not:no

Date of Publication:2015-01-01

Included Journals:SCI