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Affiliation of Author(s):微电子学院

Title of Paper:GeSn Quantum Well P-Channel Tunneling FETs Fabricated on Si(001) and (111) With Improved Subthreshold Swing

Journal:IEEE ELECTRON DEVICE LETTERS

First Author:Han, Genquan^Wang, Yibo^Liu, Yan^Zhang, Chunfu^Feng, Qian^Liu, Mingshan^Zhao, Shenglei^Cheng, Buwen^Zhang, Jincheng^Hao, Yue

Indexed by:Article

Document Code:SCI WOS:000379934100003

Volume:37

Issue:6

Page Number:701-704

ISSN No.:0741-3106

Translation or Not:no

Date of Publication:2016-01-01

Included Journals:SCI