西安电子科技大学主页平台管理系统周益春 Enhancement of Resistive Switching Performance in Hafnium Oxide (hfo2) Devices Via Sol-gel Method Stacking Tri-layer Hfo2/al-zno/hfo2 Structures Home

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Enhancement of Resistive Switching Performance in Hafnium Oxide (hfo2) Devices Via Sol-gel Method Stacking Tri-layer Hfo2/al-zno/hfo2 Structures

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Title of Paper:Enhancement of Resistive Switching Performance in Hafnium Oxide (hfo2) Devices Via Sol-gel Method Stacking Tri-layer Hfo2/al-zno/hfo2 Structures

Journal:Nanomaterials

Correspondence Author:周益春

Volume:13

Issue:1

Translation or Not:No

Date of Publication:2023-01-01

Date:2024-04-15

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Enhancement of Resistive Switching Performance in Hafnium Oxide (hfo2) Devices Via Sol-gel Method Stacking Tri-layer Hfo2/al-zno/hfo2 Structures